? semiconductor components industries, llc, 2010 april, 2010 ? rev. 7 1 publication order number: BUL44/d BUL44g switchmode npn bipolar power transistor for switching power supply applications the BUL44g have an applications specific state ? of ? the ? art die designed for use in 220 v line operated switchmode power supplies and electronic light ballasts. features ? improved efficiency due to low base drive requirements: high and flat dc current gain h fe fast switching no coil required in base circuit for turn ? off (no current tail) ? full characterization at 125 c ? tight parametric distributions are consistent lot ? to ? lot ? these devices are pb ? free and are rohs compliant* maximum ratings rating symbol value unit collector ? emitter sustaining voltage v ceo 400 vdc collector ? base breakdown voltage v ces 700 vdc emitter ? base voltage v ebo 9.0 vdc collector current ? continuous ? peak (note 1) i c i cm 2.0 5.0 adc base current ? continuous ? peak (note 1) i b i bm 1.0 2.0 adc total device dissipation @ t c = 25 c derate above 25 c p d 50 0.4 w w/ c operating and storage temperature t j , t stg ? 65 to 150 c thermal characteristics characteristics symbol max unit thermal resistance, junction ? to ? case r jc 2.5 c/w thermal resistance, junction ? to ? ambient r ja 62.5 c/w maximum lead temperature for soldering purposes 1/8 from case for 5 seconds t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. pulse test: pulse width = 5 ms, duty cycle 10%. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. power transistor 2.0 amperes, 700 volts, 40 and 100 watts to ? 220ab case 221a ? 09 style 1 1 http://onsemi.com marking diagram 2 3 BUL44g ay ww BUL44 = device code a = assembly location y = year ww = work week g = pb ? free package device package shipping ordering information BUL44g to ? 220 (pb ? free) 50 units / rail
BUL44g http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter sustaining voltage (i c = 100 ma, l = 25 mh) v ceo(sus) 400 ? ? vdc collector cutoff current (v ce = rated v ceo , i b = 0) i ceo ? ? 100 adc collector cutoff current (v ce = rated v ces , v eb = 0) (t c = 125 c) (v ce = 500 v, v eb = 0) (t c = 125 c) i ces ? ? ? ? ? ? 100 500 100 adc emitter cutoff current (v eb = 9.0 vdc, i c = 0) i ebo ? ? 100 adc on characteristics base ? emitter saturation voltage (i c = 0.4 adc, i b = 40 madc) (i c = 1.0 adc, i b = 0.2 adc) v be(sat) ? ? 0.85 0.92 1.1 1.25 vdc collector ? emitter saturation voltage (i c = 0.4 adc, i b = 40 madc) (t c = 125 c) (i c = 1.0 adc, i b = 0.2 adc) (t c = 125 c) v ce(sat) ? ? ? ? 0.20 0.20 0.25 0.25 0.5 0.5 0.6 0.6 vdc dc current gain (i c = 0.2 adc, v ce = 5.0 vdc) (t c = 125 c) (i c = 0.4 adc, v ce = 1.0 vdc) (t c = 125 c) (i c = 1.0 adc, v ce = 1.0 vdc) (t c = 125 c) (i c = 10 madc, v ce = 5.0 vdc) h fe 14 ? 12 12 8.0 7.0 10 ? 32 20 20 14 13 22 34 ? ? ? ? ? ? ? dynamic characteristics current gain bandwidth (i c = 0.5 adc, v ce = 10 vdc, f = 1.0 mhz) f t ? 13 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c ob ? 38 60 pf input capacitance (v eb = 8.0 v) c ib ? 380 600 pf dynamic saturation voltage: determined 1.0 s and 3.0 s respectively after rising i b1 reaches 90% of final i b1 (i c = 0.4 adc i b1 = 40 madc v cc = 300 v) 1.0 s (t c = 125 c) v ce(dsat) ? ? 2.5 2.7 ? ? vdc 3.0 s (t c = 125 c) ? ? 1.3 1.15 ? ? (i c = 1.0 adc i b1 = 0.2 adc v cc = 300 v) 1.0 s (t c = 125 c) ? ? 3.2 7.5 ? ? 3.0 s (t c = 125 c) ? ? 1.25 1.6 ? ?
BUL44g http://onsemi.com 3 switching characteristics: resistive load (d.c. 10%, pulse width = 20 s) turn ? on time (i c = 0.4 adc, i b1 = 40 madc i b2 = 0.2 adc, v cc = 300 v) (t c = 125 c) t on ? ? 40 40 100 ? ns turn ? off time (i c = 0.4 adc, i b1 = 40 madc i b2 = 0.2 adc, v cc = 300 v) (t c = 125 c) t off ? ? 1.5 2.0 2.5 ? s turn ? on time (i c = 1.0 adc, i b1 = 0.2 adc i b1 = 0.5 adc, v cc = 300 v) (t c = 125 c) t on ? ? 85 85 150 ? ns turn ? off time (i c = 1.0 adc, i b1 = 0.2 adc i b2 = 0.5 adc, v cc = 300 v) (t c = 125 c) t off ? ? 1.75 2.10 2.5 ? s switching characteristics: inductive load (v clamp = 300 v, v cc = 15 v, l = 200 h) fall time (i c = 0.4 adc, i b1 = 40 madc i b2 = 0.2 adc) (t c = 125 c) t fi ? ? 125 120 200 ? ns storage time (t c = 125 c) t si ? ? 0.7 0.8 1.25 ? s crossover time (t c = 125 c) t c ? ? 110 110 200 ? ns fall time (i c = 1.0 adc, i b1 = 0.2 adc i b2 = 0.5 adc) (t c = 125 c) t fi ? ? 110 120 175 ? ns storage time (t c = 125 c) t si ? ? 1.7 2.25 2.75 ? s crossover time (t c = 125 c) t c ? ? 180 210 300 ? ns fall time (i c = 0.8 adc, i b1 = 160 madc i b2 = 160 madc) (t c = 125 c) t fi 70 ? ? 180 170 ? ns storage time (t c = 125 c) t si 2.6 ? ? 4.2 3.8 ? s crossover time (t c = 125 c) t c ? ? 190 350 300 ? ns
BUL44g http://onsemi.com 4 2.0 i b , base current (ma) 0 1000 100 10 1.0 1.0 10 i c , collector current (amps) 0.01 10 1.0 0.1 0.01 1.0 0.1 typical static characteristics 100 i c , collector current (amps) 1.0 10 1.0 0.1 0.01 10 1.0 10 100 1.0 10 100 1000 c, capacitance (pf) v ce , collector-emitter voltage (volts) i c , collector current (amps) 10 1.0 0.1 0.01 1.2 0.4 0.9 0.7 0.5 0.6 0.8 1.1 1.0 h fe , dc current gain v ce = 1 v t j = 125 c t j = 25 c 100 i c , collector current (amps) 1.0 10 1.0 0.1 0.01 10 h fe , dc current gain v ce = 5 v t j = 125 c t j = 25 c t j = -20 c v ce , voltage (volts) t j = 25 c i c = 0.2 a 0.4 a 1 a 1.5 a 2 a i c /i b = 10 i c /i b = 5 v ce , voltage (volts) t j = 25 c t j = 125 c v be , voltage (volts) i c /i b = 5 i c /i b = 10 figure 1. dc current gain at 1 volt figure 2. dc current gain at 5 volts figure 3. collector saturation region figure 4. collector ? emitter saturation voltage figure 5. base ? emitter saturation region figure 6. capacitance c ib c ob t j = 25 c f = 1 mhz t j = 25 c t j = 125 c
BUL44g http://onsemi.com 5 300 250 200 150 100 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 t, time (ns) i c , collector current (amps) 6.0 5.0 4.0 3.0 2.0 0 1.0 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c , collector current (amps) t, time (ns) 2500 2000 1500 1000 500 0 0.4 0.8 1.2 1.6 2.0 2.4 i c , collector current (amps) 250 200 150 100 50 0 i c , collector current (amps) 0.4 0.8 1.2 1.6 2.0 2.4 typical switching characteristics (i b2 = i c /2 for all switching) h fe , forced gain 2.0 1.5 1.0 0.5 5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15 200 150 100 50 i c , collector current (amps) 0.4 0.8 1.2 1.6 2.0 2.4 figure 7. resistive switching, t on figure 8. resistive switching, t off figure 9. inductive storage time, t si figure 10. inductive storage time figure 11. inductive switching, t c and t fi i c /i b = 5 figure 12. inductive switching, t c and t fi i c /i b = 10 t, time (s) , storage time ( t si s) t, time (ns) t, time (ns) i c /i b = 10 i c /i b = 5 i c /i b = 5 i c /i b = 10 i c /i b = 5 i c /i b = 10 i c = 0.4 a i c = 1 a t c t fi t c t fi i b(off) = i c/2 v cc = 300 v pw = 20 s i b(off) = i c/2 v cc = 300 v pw = 20 s i b(off) = i c/2 v cc = 15 v v z = 300 v l c = 200 h i b(off) = i c/2 v cc = 15 v v z = 300 v l c = 200 h i b(off) = i c/2 v cc = 15 v v z = 300 v l c = 200 h i b(off) = i c/2 v cc = 15 v v z = 300 v l c = 200 h t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c
BUL44g http://onsemi.com 6 130 120 110 100 90 80 10 11 12 13 14 15 h fe , forced gain 9.0 8.0 7.0 6.0 5.0 140 150 160 170 110 90 70 50 10 11 12 13 14 15 h fe , forced gain 9.0 8.0 7.0 6.0 5.0 130 150 170 190 0.1 1.0 10 10 100 1000 v ce , collector-emitter voltage (volts) 0.01 typical switching characteristics (i b2 = i c /2 for all switching) 0 200 400 500 2.5 2.0 1.5 1.0 0.5 0 v ce , collector-emitter voltage (volts) 100 300 600 700 guaranteed safe operating area information figure 13. inductive fall time figure 14. inductive crossover time figure 15. forward bias safe operating area figure 16. reverse bias switching safe operating area t fi , fall time (ns) t c , crossover time (ns) i c , collector current (amps) i c , collector current (amps) i c = 0.4 a i c = 1 a i b(off) = i c/2 v cc = 15 v v z = 300 v l c = 200 h i b(off) = i c/2 v cc = 15 v v z = 300 v l c = 200 h i c = 1 a i c = 0.4 a 10 s 1 s 50 s 1ms 5ms extended soa dc (BUL44) t c 125 c gain 4 l c = 500 h -1.5 v -5 v 0 v t j = 25 c t j = 125 c t j = 25 c t j = 125 c 20 40 60 80 100 1.0 0.8 0.6 0.4 0.2 0 t c , case temperature ( c) power derating factor 120 140 1 6 figure 17. forward bias power derating second break- down derating thermal derating there are two limitations on the power handling ability of a transistor: average junc tion temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 15 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c > 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 15 may be found at any case temperature by using the appropriate curve on figure 17. t j(pk) may be calculated from the data in figure 20. at an y case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. for inductive loads, high voltage and current must be sustained simultaneously during turn ? off with the base ? to ? emitter junction reverse ? biased. the safe level is specified as a reverse ? biased safe operating area (figure 16). this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
BUL44g http://onsemi.com 7 -5 -4 -3 -2 -1 0 1 2 3 4 5 012345678 time v ce volts i b 1 s 3 s 90% i b dyn 1 s dyn 3 s 10 9 8 7 6 5 4 3 2 1 0 012 34567 8 time i b i c t si v clamp 10% v clamp 90% i b 1 10% i c t c 90% i c t fi +15 v 1 f 150 3 w 100 3 w mpf930 +10 v 50 common -v off 500 f mpf930 mtp8p10 mur105 mje210 mtp12n10 mtp8p10 150 3 w 100 f i out a 1 f i c peak v ce peak v ce i b i b 1 i b 2 v(br)ceo(sus) l = 10 mh rb2 = v cc = 20 volts i c (pk) = 100 ma inductive switching l = 200 h rb2 = 0 v cc = 15 volts rb1 selected for desired i b 1 rbsoa l = 500 h rb2 = 0 v cc = 15 volts rb1 selected for desired i b 1 r b2 r b1 figure 18. dynamic saturation voltage measurements figure 19. inductive switching measurements table 1. inductive load switching drive circuit t, time (ms) 1000 100 10 1.0 0.1 0.01 0.01 0.01 0.01 0.5 0.2 0.1 0.05 0.02 1.0 r(t) transient thermal resistance (normalized) single pulse typical thermal response r jc(t) = r(t) r jc d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc1 (t) duty cycle, d = t 1 /t 2 t 1 t 2 p (pk) figure 20. typical thermal response (z jc (t)) for BUL44
BUL44g http://onsemi.com 8 package dimensions to ? 220ab case 221a ? 09 issue af style 1: pin 1. base 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. BUL44/d switchmode is a trademark of semiconductor components industries, llc. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
